? 2014 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 ? c to 150 ? c 1000 v v dgr t j = 25 ? c to 150 ? c, r gs = 1m ? 1000 v v gss continuous ? 30 v v gsm transient ? 40 v i d25 t c = 25 ? c 750 ma i dm t c = 25 ? c, pulse width limited by t jm 3a i a t c = 25 ? c1a e as t c = 25 ? c 100 mj dv/dt i s ? i dm , v dd ? v dss , t j ? 150 ? c 3 v/ns p d t c = 25 ? c40w t j -55 ... +150 ? c t jm 150 ? c t stg -55 ... +150 ? c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062in.) from case for 10s 260 c m d mounting torque (to-220) 1.13 / 10 nm/lb.in weight to-220 3.0 g to-263 2.5 g to-263hv 2.5 g ds98736f(5/14) symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 ? a 1000 v v gs(th) v ds = v gs , i d = 250 ? a 2.5 4.5 v i gss v gs = ? 30v, v ds = 0v ????????????????????? 100 na i dss v ds = v dss , v gs = 0v 25 ? a t j = 125 ? c 500 ?? a r ds(on) v gs = 10v, i d = 375ma, note 1 17 ? high voltage power mosfet n-channel enhancement mode avalanche rated ixta05n100hv ixta05n100 IXTP05N100 v dss = 1000v i d25 = 750ma r ds(on) ? ? ? ? ? 17 ? ? ? ? ? features ? high voltage package (to-263hv) ? fast switching times ? avalanche rated ? r ds(on) hdmos tm process ? rugged polysilicon gate cell structure ? extended fbsoa advantages ? high power density ? space savings applications ? switch-mode and resonant-mode power supplies ? flyback inverters ? dc choppers g = gate d = drain s = source tab = drain g d s to-220ab (ixtp) d (tab) to-263hv (ixta) g s d (tab) to-263 aa (ixta) g s d (tab)
ixys reserves the right to change limits, test conditions, and dimensions. ixta05n100hv ixta05n100 IXTP05N100 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1: pulse test, t ? 300 ? s, duty cycle, d ? 2%. symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. g fs v ds = 20v, i d = 500ma, note 1 0.55 0.93 s c iss 260 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 22 pf c rss 8 pf t d(on) 11 ns t r 19 ns t d(off) 40 ns t f 28 ns q g(on) 7.8 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 1a 1.4 nc q gd 4.1 nc r thjc 3.1 ?? c/w r thcs (to-220) 0.50 ???????? c/w source-drain diode symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. i s v gs = 0v 750 ma i sm repetitive, pulse width limited by t jm 3 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr 710 ns resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 1a r g = 47 ? (external) i f = i s , -di/dt = 100a/ ? s v r = 100v, v gs = 0v pins: 1 - gate 2 - drain 3 - source to-220ab outline to-263aa outline to-263hv outline pin: 1 - gate 2 - source 3 - drain pin: 1 - gate 2,4 - source 3 - drain
? 2014 ixys corporation, all rights reserved ixta05n100hv ixta05n100 IXTP05N100 fig. 1. output characteristics @ t j = 25oc 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 10v 8v 7v 6v 5.5v 5v fig. 2. output characteristics @ t j = 125oc 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 10v 7v 6v 5v 4.5v 5.5v fig. 3. r ds(on) normalized to i d = 375ma value vs. junction temperature 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 750ma i d = 375ma fig. 4. r ds(on) normalized to i d = 375ma value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 0.00.20.40.60.81.01.21.41.6 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. input admittance 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 5. maximum drain current vs. case temperature 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. ixta05n100hv ixta05n100 IXTP05N100 fig. 7. transconductance 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 8. forward voltage drop of intrinsic diode 0.0 0.4 0.8 1.2 1.6 2.0 2.4 0.4 0.45 0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 9. gate charge 0 1 2 3 4 5 6 7 8 9 10 012345678 q g - nanocoulombs v gs - volts v ds = 500v i d = 1a i g = 1ma fig. 10. capacitance 1 10 100 1,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarad s f = 1 mhz c iss c rss c oss fig. 11. forward-bias safe operating area @ t c = 25oc 0.01 0.1 1 10 10 100 1,000 v ce - volts i c - amperes 100s 1ms r ds(on) limit t j = 150oc t c = 25oc single pulse 10ms 100ms dc fig. 12. forward-bias safe operating area @ t c = 75oc 0.01 0.1 1 10 10 100 1,000 v ce - volts i c - amperes 100s 1ms r ds(on) limit t j = 150oc t c = 75oc single pulse 10ms 100ms dc 25s
? 2014 ixys corporation, all rights reserved ixta05n100hv ixta05n100 IXTP05N100 ixys ref: t_05n100(1t) 5-13-14-a fig. 13. maximum transient thermal impedance 0.1 1 10 0.0001 0.001 0.01 0.1 1 pulse width - second z (th)jc - oc / w
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